通过高频等离子体增强化学气相沉积（HF PECVD）在低温下沉积氢化非晶硅氮化物膜（SiNx：H）。 主要工作是研究等离子体频率和等离子体功率密度在确定薄膜特性（尤其是应力）中的作用。 通过傅立叶变换红外光谱（FTIR）获得有关膜中化学键的信息。 SiNx：H膜中的应力由衬底曲率测量确定。 结果表明，等离子体频率在控制SiNx：H薄膜的应力中起着重要作用。 对于以40.68MHz的等离子体频率生长的氮化硅层，观察到初始拉伸应力在400MPa-700MPa的范围内。 氮化硅膜的固有应力的测量结果表明，该应力量足够用于应变硅光子学中的膜应用。

A novel and simple polarization independent grating couplers is designed and analyzed here, in which the TE polarization and the TM polarization light can be simultaneously coupled into a silicon waveguide along the same direction with high coupling efficiency. For the polarization-insensitive grati

读取与编辑edid工具

Broadband transverse displacement sensing by exploiting the interaction of a focused radially polarized beam with a silicon hollow nanodisk is proposed. The multipolar decomposition analysis indicates that the interference between a longitudinal total electric dipole (TED) moment and a lateral magnetic dipole (MD) moment is dominant in the far-field transverse scattering in the near-infrared region. Within a broadband wavelength range with the width of 155 nm, the longitudinal TED is almost in p

The basic propagation properties of the silica and silicon subwavelength-diameter hollow wire waveguides have been investigated by comparison. It shows that the silica and silicon subwavelength-diameter hollow wire waveguides have some interesting properties, such as enhanced evanescent field in the cladding, enhanced intensity in the hollow core, and large waveguide dispersion. For the different confinement ability, the enhanced field in the hollow core and cladding of the silica subwavelength-

Silicon photonics design: from devices to systems by Chrostowski, Lukas Hochberg, Michael From design and simulation through to testing and fabrication, this hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs.

USB转串口驱动 Silicon Labs CP210x USB to UART Bridge VERSION:6.7.2.200 DATE:2015/11/20

Silicon Laboratories IDE 是新华龙电子C8051F单片机开发套件

Silicon Processing for the VLSI Era (I)，(II)，(III)，(IV)

Berkeley教材Silicon VLSI Technology Fundamemtals, Practice and Modeling的答案，非常全面！