行业分类-物理装置-高功率密度电机冷却系统设计方法及采用该方法设计的电机.zip
2021-07-24 09:03:33
824KB
输入电压为90-264Vac（47-63Hz）;
输出电压为24Vdc
输出电流为10A
总功率为240W；
目标效率大于或等于93％；
它的体积尽可能小。
高效电源，主要使用PFC + LLC + SR架构，
当前功率为恒压输出。用于AC-DC字段。
2021-07-04 21:25:32
172KB
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高功率密度碳化硅MOSFET软开关三相逆变器损耗分析pdf,相比硅 IGBT，碳化硅 MOSFET 拥有更快的开关速度和更低的开关损耗。 碳化硅 MOSFET 应用于高开关频率场合时其开关损耗随着开关频率的增加亦快速增长。 为进一步提升碳化硅 MOSFET 逆变器的功率密度，探讨了采用软开关技术的碳化硅 MOSFET 逆变器。 比较了不同开关频率下的零电压开关三相逆变器及硬开关三相逆变器的损耗分布和关键无源元件的体积， 讨论了逆变器效率和关键无源元件体积与开关频率之间的关系。 随着开关频率从数十 kHz 逐渐提升至数百 kHz，软开关逆变器不仅能够维持较高的转换效
2021-06-24 08:50:30
2.36MB
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何谓半桥转换器
半桥结构的工作原理
环路补偿
LM5035 芯片的特色
LM5035 芯片的评估电路板
LM5035 芯片的相关应用
2021-05-17 17:01:15
3.58MB
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150W, AC-19.5VDC PFC+LLC Demo Board
This design uses a Critical Conduction Mode (CrCM/DCM) PFC (AC-400 VDC), followed by an LLC DC-DC (400-19.5
VDC). For both stages, the switching frequency was increased to the maximum allowed by the off-the-shelf control
ICs available. The board is designed to be a ‘demonstration’ board, and is not yet optimized as a production design.
With this design, a power density of 1.56 W/cc or 25.5 W/in3 is achieved, which is around 2x typical and 40% more
than the best-on-class Si-based design today. Customer designs are expected to achieve even higher power density.
2021-05-13 15:23:05
2.13MB
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