上传者: 38620099
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上传时间: 2021-02-07 20:05:15
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文件大小: 640KB
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文件类型: PDF
A new concept high-voltage pseudo-pchannel lateral double-diffused MOS (p-LDMOS) with multiple current paths for conduction is proposed and investigated in this paper. The proposed power device consists of two hole current paths (p-channel MOS device) and one electron current path (n-channel MOS dev