Nonlinear Transistor Model Parameter Extraction Techniques
剑桥
Achieve accurate and reliable parameter extraction using this complete survey of stateof-
the-art techniques and methods. A team of experts from industry and academia
provides you with insights into a range of key topics, including parasitics, instrinsic
extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating
and traps, noise, and package effects.
Learn how similar approaches to parameter extraction can be applied to different
technologies. A variety of real-world industrial examples and measurement results show
you how the theories and methods presented can be used in practice. Whether you use
transistor models for evaluation of device processing, need to understand the methods
behind the models you use in circuit design, or you want to develop models for existing
and new device types, this is your complete guide to parameter extraction.
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