crossbar 电路设计
Molecular electronics offer an alternative pathway to construct nanoscale
circuits in which the critical dimension is naturally associated with
molecular sizes. We describe the fabrication and testing of nanoscale
molecular-electronic circuits that comprise a molecular monolayer of
[2]rotaxanes sandwiched between metal nanowires to form an 8 × 8
crossbar within a 1 μm2 area. The resistance at each cross point of the
crossbar can be switched reversibly. By using each cross point as an active
memory cell, crossbar circuits were operated as rewritable, nonvolatile
memory with a density of 6.4 Gbits cm−2. By setting the resistances at
specific cross points, two 4 × 4 subarrays of the crossbar were configured to
be a nanoscale demultiplexer and multiplexer that were used to read memory
bits in a third subarray.
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