In this letter, a p-channel lateral doublediffused MOSFET (p-LDMOS) with double electron paths used to enhance the current capability is proposed. The proposed p-LDMOS has two n-channels that are controlled by an auto-generated voltage signal (VGn). The voltage signal VGn is generated during the ON and OFF states of the hole current that flows across an integrated resistor (Rp) implemented in the P-base region. Thus, the current capability of the p-LDMOS can be significantly enhanced by the intr