CC2530 ADTest(采集外部电压 P0.7输入 内部VDD参考 单端输入 定时串口显示

DOUBLE DATA RATE(DDR) SDRAM VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two – one per byte) • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • DLL to align DQ and DQS transitions with CK • Four internal banks for concurrent operation • Data mask (DM) for masking write data (x16 has two – one per byte) • Programmable burst lengths: 2, 4, or 8 • Auto precharge option • Auto Refresh and Self Refresh Modes • Longer lead TSOP for improved reliability (OCPL) • 2.5V I/O (SSTL_2 compatible)

指导在使用移动模组遇到SIM_VDD为什么突然没有输出电压，CPIN？—error，通过长期经验总结，来解决分析帮助开发者找出问题原因，找到解决的方法，经过长期实践，并亲测有效，希望可以帮助广大朋友能够解决自己的问题！

对于PCB抗干扰设计很有用的技术资料！ 这篇主要阐述了电子电路中VCC、VDD、VSS、GND和AGND五种不同符号的区别

The DoD Architecture Framework (DoDAF) and DoDAF Meta Model (DM2) Version 2.02