In this letter, a p-channel lateral doublediffused MOSFET (p-LDMOS) with double electron paths used to enhance the current capability is proposed. The proposed p-LDMOS has two n-channels that are controlled by an auto-generated voltage signal (VGn). The voltage signal VGn is generated during the ON and OFF states of the hole current that flows across an integrated resistor (Rp) implemented in the P-base region. Thus, the current capability of the p-LDMOS can be significantly enhanced by the intr
2021-02-07 20:05:19
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A new concept high-voltage pseudo-pchannel lateral double-diffused MOS (p-LDMOS) with multiple current paths for conduction is proposed and investigated in this paper. The proposed power device consists of two hole current paths (p-channel MOS device) and one electron current path (n-channel MOS dev
2021-02-07 20:05:15
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BlueNRG Current
2021-01-28 22:08:18
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