A novel diode-clamped carrier stored trench bipolar transistor (CSTBT) with improved performances is proposed. The improvement has been achieved by introducing a P-layer region under the trench gate, which is connected to the cathode electrode through two integrated series diodes. In the blocking-state, almost all of the reverse voltage is sustained by Player/N-drift junction, which makes the doping concentration of the carrier stored layer is independent of the breakdown voltage,thus overcoming

In this letter, a p-channel lateral doublediffused MOSFET (p-LDMOS) with double electron paths used to enhance the current capability is proposed. The proposed p-LDMOS has two n-channels that are controlled by an auto-generated voltage signal (VGn). The voltage signal VGn is generated during the ON and OFF states of the hole current that flows across an integrated resistor (Rp) implemented in the P-base region. Thus, the current capability of the p-LDMOS can be significantly enhanced by the intr

A new concept high-voltage pseudo-pchannel lateral double-diffused MOS (p-LDMOS) with multiple current paths for conduction is proposed and investigated in this paper. The proposed power device consists of two hole current paths (p-channel MOS device) and one electron current path (n-channel MOS dev

Alternating Current motors.docx

BlueNRG Current

利用MATLAB仿的的基于电流控制的双向DC-DC变换器！！！