Integrated Circuits Thermal Measurement Method - Electrical Test Method (Single Semiconductor Device)

JEDEC J-STD-046：2016 Customer Notification Standard for Product-Process Changes by Electronic Product Suppliers - 完整英文电子版（10页）.pdf

This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this document. free for $54

JEDEC官方，最新UFS 3.1 标准文档。JESD220E，2020年1月最新版本。

JEDEC DDR3 SDRAM SPD规范，描述了DDR3 SDRAM SPD中每个字节的含义。

JEDEC22-B102E芯片可悍性标准

JEDEC STANDARD DDR4协议文件及相关芯片手册MT40A2G4PM-083E Datasheet K4A4G045WD Datasheet，请按需下载，介绍了DDR3SDRAM相关使用规范，时序规范以及相关使用状态介绍

204-Pin DDR3 SDRAM Unbuffered SODIMM Design Specification

JEDEC DDR4 SPD SPEC 规格书 JESD79-4 DDR4 SDRAM.pdf

JESD204C协议标准，兼容204B协议，对于通信专业的童鞋非常重要