梯度成分AlGaAs / GaAs纳米线光电探测器的光谱灵敏度

氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响

Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires (NWs) are grown by metal organic chemical vapor deposition on GaAs(111) B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adatom enhances the influence of diameters on NWs growth rate. NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an a

The expressions of pulse characteristics such as output energy, peak power, and pulse width are obtained by solving the coupled rate equations describing the operation of GaAs semiconductor saturable absorber Q-switched lasers. The key parameters of an optimally coupled GaAs saturable absorber Q-swi

用分子束外延(MBE)技术,在GaAa(100)衬底上生长了厚度从0.045 μm到1.4 μm的ZnSe薄膜。通过室温拉曼光谱的测量对ZnSe薄膜纵光学声子(Longitudinal-optical phonon)的谱形进行了分析。用拉曼散射的空间相关模型定量分析了一级拉曼散射的空间相关长度与晶体质量之间的关系,结果表明ZnSe外延层的晶体质量随着外延层厚度的减薄是渐渐退化的,这是由于界面失配位错引入外延层所致,理论分析与实验结果相吻合。

Doubly passively Q-switched Nd:GGG laser with a monolayer graphene saturable absorber and GaAs wafer

研究了1 MeV和1.8 MeV电子辐照下GaInP GaAs Ge三结太阳电池的辐照损伤效应.电学性能研究结果表明, GaInP GaAs Ge三结太阳电池的开路电压、短路电流和最大功率随辐照剂量的增加发生明显衰降,在1 MeV电子辐 照下剂量为1× 1015cm- 2时,与辐照前相比最大功率衰降了17.7%.暗I-V特性分析表明,高能电子辐照下三结电池 串、并联电阻的变化是引起太阳电池电学性能衰降的重要原因.光谱响应分析结果表明,GaInP GaAs Ge三结太阳电 池电学性能发生明显衰降的主要原因是其GaAs子电池的严重损伤造成的,而GaAs子电池的损伤主要表现为基区 底部光生载流子收集效率的明显衰降.提高GaInP GaAs Ge三结太阳电池抗辐照能力的关键在于尽可能地减小 GaAs子电池的基区损伤