实时连接件的离线一致性测试,李少东,陈霄泓,协调在复杂信息物理系统中扮演了重要角色。协调语言模型的复杂性使得测试成为开发信息物理系统过程中非常重要的一环。一致性测试
2022-11-25 06:29:43 506KB Formal Method Reo Conformance
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本文提出了一种新的直接提取方法,用于确定HEMT的寄生电容。 该方法基于物理意义上的耗尽层模型和夹断式冷FET的两端口网络的理论分析。 这种方法的主要优点是可以在不同的夹断条件下提取寄生电容C-pg,C-pd和C-pdg。 对于2 x 20 m浇口宽度HEMT(浇口指的数量x单位浇口宽度),在建模结果和测量结果之间取得了良好的一致性。
2022-11-21 10:48:48 159KB Cold FET; HEMT; pinch-off
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压缩感知贝叶斯 DOA算法,Off-grid模型,近似模型。
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人工智人-家居设计-on-off智能刺激响应纳米药物控释系统制备、表征及性能研究.pdf
2022-07-03 19:04:02 6.39MB 人工智人-家居
C#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_ExcelC#例子代码 A3001_Office_Excel
2022-06-18 09:08:35 30KB C#例子代码A3001_Off
C#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_Office_OutlookC#例子代码 A3002_O
2022-06-18 09:08:35 6KB C#例子代码A3002_Off
Advanced Office Password Recovery 4.03非常不错,找了半天,亲测好用才上传的
2022-06-10 22:55:35 3.84MB Office Advanced Off password
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l27-AWS Certified Solutions Architect Off.pdf
2022-05-04 10:03:46 11.91MB aws 文档资料 云计算
这是一个将off文件转化为obj文件的简短程序,仅供参考。
2022-03-31 14:05:45 2KB off转化为obj
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This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits
2022-03-18 21:45:50 8.82MB Analog CMOS Design
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