在现代半导体行业中，研发中心对于光刻技术的关注是非常重要的。

Raith_GDSII：用于Raith电子束光刻（EBL）和聚焦离子束（FIB）工具的MATLAB工具

Extreme ultraviolet lithography (EUVL) is the principal lithography technology-beyond the current 193-nm-based optical lithography-aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists. This book covers the fundamental and latest status of all aspects of EUVL used in the field. Since 2008, when SPIE Press published the first edition of EUVL Lithography, much progress has taken place in the development of EUVL as the choice technology for next-generation lithography. In 2008, EUVL was a prime contender to replace 193-nm-based optical lithography in leading-edge computer chip making, but not everyone was convinced at that point. Switching from 193-nm to 13.5-nm wavelengths was a much bigger jump than the industry had attempted before. It brought several difficult challenges in all areas of lithography-light source, scanner, mask, mask handling, optics, optics metrology, resist, computation, materials, and optics contamination. These challenges have been effectively resolved, and several leading-edge chipmakers have announced dates, starting in 2018, for inserting EUVL into high-volume manufacturing. This comprehensive volume comprises contributions from the world's leading EUVL researchers and provides the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. This book is intended for people involved in one or more aspects of EUVL, as well as for students, who will find this text equally valuable.

As the requirements of the semiconductor industry have become more demanding in terms of resolution and speed it has been necessary to push photoresist materials far beyond the capabilities previously envisioned. Currently there is significant worldwide research effort in to so called Next Generation Lithography techniques such as EUV lithography and multibeam electron beam lithography. These developments in both the industrial and the academic lithography arenas have led to the proliferation of numerous novel approaches to resist chemistry and ingenious extensions of traditional photopolymers. Currently most texts in this area focus on either lithography with perhaps one or two chapters on resists, or on traditional resist materials with relatively little consideration of new approaches. This book therefore aims to bring together the worlds foremost resist development scientists from the various community to produce in one place a definitive description of the many approaches to lithography fabrication. Assembles up-to-date information from the world’s premier resist chemists and technique development lithographers on the properties and capabilities of the wide range of resist materials currently under investigationIncludes information on processing and metrology techniquesBrings together multiple approaches to litho pattern recording from academia and industry in one place

光刻机作为前道工艺七大设备之首（光刻机、刻蚀机、镀膜设备、量测设备、清洗机、离子注入机、其他设备），价值含量极大，在制造设备投资额中单项占比高达23%，技术要求极高，涉及精密光学、精密运动、高精度环境控制等多项先进技术。光刻机是人类文明的智慧结晶，被誉为半导体工业皇冠上的明珠。

湿法刻蚀工艺和干法刻蚀工艺的比较？ 干法刻蚀优缺点： 分辨率高 各向异性腐蚀能力强 均匀性、重复性好 便于连续自动操作 成本高，选择比一般较低 湿法刻蚀的优缺点： 成本低廉 选择比高 各向同性 腐蚀速率难以控制

综述了国内外最近几年微立体光刻技术的研究进展。阐述了微立体光刻技术中的线扫描技术及面投影技术的基本原理及分类,分析了它们的技术核心并对相关参数进行了比较。简要阐述了微立体光刻技术在制造原型、微系统部件及微流体装置等方面的应用,最后,对该技术的发展前景作了展望。

双层光刻胶技术 随着线条宽度的不断缩小，为了防止胶上图形出现太大的深宽比，提高对比度，应该采用很薄的光刻胶。但薄胶会遇到耐腐蚀性的问题。由此开发出了 双层光刻胶技术，这也是所谓 超分辨率技术 的组成部分。

光刻与刻蚀工艺

光刻与刻蚀工艺.